MWI35-12T7T Datasheet and Replacement
Type Designator: MWI35-12T7T
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Qgⓘ - Total Gate Charge, typ: 170 nC
Package: MODULE
- IGBT Cross-Reference
MWI35-12T7T Datasheet (PDF)
mwi35-12t7t.pdf

MWI 35-12T7TIC25 = 60 ASix-PackVCES = 1200 VTrench IGBTVCE(sat) typ. = 1.7 VPart name (Marking on product)MWI 35-12T7T15, 1625, 2615 91726 1023, 2421, 22NTC19, 20E72873Pin configuration see outlines.1837 1148 1213, 1427, 28Features: Application: Package: Trench IGBT technology AC motor drives "E2-Pack" standard outline lo
mwi35-12a7.pdf

MWI 35-12 A7IC25 = 62 AIGBT ModulesVCES = 1200 VSixpackVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA131 5 92 6 101615143 7 11 E728734 8 12See outline drawing for pin arrangement17Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVCES TVJ = 25C to 150C 1200
Datasheet: MWI25-12A7T , MWI25-12E7 , MWI300-12E9 , MWI300-17E9 , MWI30-06A7 , MWI30-06A7T , MWI30-12E6K , MWI35-12A7 , GT45F122 , MWI450-12E9 , MWI451-17E9 , MWI45-12T6K , MWI50-06A7 , MWI50-06A7T , MWI50-12A7 , MWI50-12A7T , MWI50-12E6K .
Keywords - MWI35-12T7T transistor datasheet
MWI35-12T7T cross reference
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