All IGBT. MWI60-12T6K Datasheet

 

MWI60-12T6K IGBT. Datasheet pdf. Equivalent


   Type Designator: MWI60-12T6K
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 58 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Qgⓘ - Total Gate Charge, typ: 330 nC
   Package: MODULE

 MWI60-12T6K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MWI60-12T6K Datasheet (PDF)

 ..1. Size:158K  ixys
 mwi60-12t6k.pdf

MWI60-12T6K MWI60-12T6K

MWI 60-12T6KIC25 = 58 AIGBT ModuleVCES = 1200 VSixpackVCE(sat) typ. = 1.9 VShort Circuit SOA CapabilitySquare RBSOAPreliminary dataPart name (Marking on product)MWI 60-12T6K10, 2318 2214817 211311, 12NTC 15, 1619, 20E72873Pin configuration see outlines.74 263 159, 24Features: Application: Package: Trench IGBTs AC drives UL reg

 8.1. Size:83K  ixys
 mwi60-06g6k.pdf

MWI60-12T6K MWI60-12T6K

Advanced Technical InformationMWI 60-06 G6KIC25 = 60 AIGBT ModuleVCES = 600 VSixpackVCE(sat) typ. = 2.3 VSquare RBSOA10, 2314 18 22813 17 2111, 12NTC15, 1619, 2076 4 25 3 19, 24Features IGBTs IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- fast switchingVCES TVJ = 25C to 150C 600 V- short tail current for optimizedper

Datasheet: MWI50-06A7 , MWI50-06A7T , MWI50-12A7 , MWI50-12A7T , MWI50-12E6K , MWI50-12E7 , MWI50-12T7T , MWI60-06G6K , CRG15T120BNR3S , MWI75-06A7 , MWI75-06A7T , MWI75-12A8 , MWI75-12E8 , MWI75-12T7T , MWI75-12T8T , MWI80-12T6K , VII130-06P1 .

 

 
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