All IGBT. MWI80-12T6K Datasheet

 

MWI80-12T6K Datasheet and Replacement


   Type Designator: MWI80-12T6K
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Qg ⓘ - Total Gate Charge, typ: 470 nC
   Package: MODULE
 

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MWI80-12T6K Datasheet (PDF)

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MWI80-12T6K

MWI 80-12T6KIC25 = 80 AIGBT ModuleVCES = 1200 VSixpackVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOAPreliminary dataPart name (Marking on product)MWI 80-12T6K10, 2318 2214817 211311, 12NTC 15, 1619, 20E72873Pin configuration see outlines.74 263 159, 24Features: Application: Package: Trench IGBTs AC drives UL reg

Datasheet: MWI60-06G6K , MWI60-12T6K , MWI75-06A7 , MWI75-06A7T , MWI75-12A8 , MWI75-12E8 , MWI75-12T7T , MWI75-12T8T , IRGP4066D , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ .

History: APTGF150DU120T

Keywords - MWI80-12T6K transistor datasheet

 MWI80-12T6K cross reference
 MWI80-12T6K equivalent finder
 MWI80-12T6K lookup
 MWI80-12T6K substitution
 MWI80-12T6K replacement

 

 
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