MWI80-12T6K Specs and Replacement
Type Designator: MWI80-12T6K
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE MWI80-12T6K Substitution - IGBT ⓘ Cross-Reference Search
MWI80-12T6K datasheet
mwi80-12t6k.pdf
MWI 80-12T6K IC25 = 80 A IGBT Module VCES = 1200 V Sixpack VCE(sat) typ. = 2.0 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 80-12T6K 10, 23 18 22 14 8 17 21 13 11, 12 NTC 15, 16 19, 20 E72873 Pin configuration see outlines. 7 4 2 6 3 1 5 9, 24 Features Application Package Trench IGBTs AC drives UL reg... See More ⇒
Specs: MWI60-06G6K , MWI60-12T6K , MWI75-06A7 , MWI75-06A7T , MWI75-12A8 , MWI75-12E8 , MWI75-12T7T , MWI75-12T8T , SGP30N60 , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ .
Keywords - MWI80-12T6K transistor spec
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