MWI80-12T6K IGBT. Datasheet pdf. Equivalent
Type Designator: MWI80-12T6K
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Qgⓘ - Total Gate Charge, typ: 470 nC
Package: MODULE
MWI80-12T6K Transistor Equivalent Substitute - IGBT Cross-Reference Search
MWI80-12T6K Datasheet (PDF)
mwi80-12t6k.pdf
MWI 80-12T6KIC25 = 80 AIGBT ModuleVCES = 1200 VSixpackVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOAPreliminary dataPart name (Marking on product)MWI 80-12T6K10, 2318 2214817 211311, 12NTC 15, 1619, 20E72873Pin configuration see outlines.74 263 159, 24Features: Application: Package: Trench IGBTs AC drives UL reg
Datasheet: MWI60-06G6K , MWI60-12T6K , MWI75-06A7 , MWI75-06A7T , MWI75-12A8 , MWI75-12E8 , MWI75-12T7T , MWI75-12T8T , TGD30N40P , VII130-06P1 , VKI50-06P1 , VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2