GT10G101 Specs and Replacement
Type Designator: GT10G101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Package: TO220F
GT10G101 Substitution - IGBT ⓘ Cross-Reference Search
GT10G101 datasheet
gt10g131.pdf
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage VGE = 4.0 V (min) (@IC = 200 A) Peak collector current IC = 200 A (max) Built... See More ⇒
Specs: GA300TD60U, GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U, GA600GD25S, GA75TS120U, GA75TS60U, GT30F132, GT10J301, GT10J311, GT10Q301, GT10Q311, GT15G101, GT15J101, GT15J102, GT15J103
Keywords - GT10G101 transistor spec
GT10G101 cross reference
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