STGB20NB41LZ IGBT. Datasheet pdf. Equivalent
Type Designator: STGB20NB41LZ
Type: IGBT + Built-in Zener Diodes
Marking Code: GB20NB41LZ
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 410 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 220 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Qgⓘ - Total Gate Charge, typ: 46 nC
Package: D2PAK
STGB20NB41LZ Transistor Equivalent Substitute - IGBT Cross-Reference Search
STGB20NB41LZ Datasheet (PDF)
stgb20nb41lz.pdf
STGB20NB41LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB41LZ CLAMPED
stgb20nb32lz stgb20nb32lz-1 .pdf
STGB20NB32LZSTGB20NB32LZ-1N-CHANNEL CLAMPED 20A - D2PAK/I2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB32LZ CLAMPED
stgb20nb32lz stgb20nb32lz-1.pdf
STGB20NB32LZSTGB20NB32LZ-1N-CHANNEL CLAMPED 20A - D2PAK/I2PAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB32LZ CLAMPED
stgb20nb37lz.pdf
STGB20NB37LZN-CHANNEL CLAMPED 20A - DPAKINTERNALLY CLAMPED PowerMESH IGBTTYPE VCES VCE(sat) ICSTGB20NB37LZ CLAMPED
Datasheet: STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD , STGB19NC60S , STGB19NC60W , IRG4PC50U , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2