STGB20NB41LZ Datasheet and Replacement

   Type Designator: STGB20NB41LZ
   Type: IGBT + Built-in Zener Diodes
   Marking Code: GB20NB41LZ
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 410 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 2.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 220 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qg ⓘ - Total Gate Charge, typ: 46 nC
   Package: D2PAK
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