GT10Q311 Datasheet and Replacement
Type Designator: GT10Q311
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: DPAK
GT10Q311 substitution
GT10Q311 Datasheet (PDF)
gt10q301.pdf
GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25
Datasheet: GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT30F124 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 .
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