All IGBT. GT10Q311 Datasheet

 

GT10Q311 Datasheet and Replacement


   Type Designator: GT10Q311
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: DPAK
      - IGBT Cross-Reference

 

GT10Q311 Datasheet (PDF)

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GT10Q311

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GT10Q311

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25

Datasheet: GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT30F124 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 .

History: 2MBI100UA-120 | SKM150GB12T4

Keywords - GT10Q311 transistor datasheet

 GT10Q311 cross reference
 GT10Q311 equivalent finder
 GT10Q311 lookup
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