GT10Q311 PDF and Equivalents Search

 

GT10Q311 PDF Specs and Replacement


   Type Designator: GT10Q311
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 130 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: DPAK
 

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GT10Q311 PDF specs

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GT10Q311

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GT10Q311

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 ... See More ⇒

Specs: GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT30F124 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 .

History: CM400HG-66H

Keywords - GT10Q311 transistor spec

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