STGE200NB60S Specs and Replacement
Type Designator: STGE200NB60S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
tr ⓘ - Rise Time, typ: 112 nS
Coesⓘ - Output Capacitance, typ: 1100 pF
Package: ISOTOP
STGE200NB60S Substitution - IGBT ⓘ Cross-Reference Search
STGE200NB60S datasheet
stge200nb60s.pdf
STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features VCE(sat) TYPE VCES IC TC (typ.) 1.2V 150A 100 C STGE200NB60S 600V 1.3V 200A 25 C High input impedance (voltage driven) ISOTOP Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability Description Internal schematic diagram Usi... See More ⇒
Specs: STGD5NB120SZ , STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , FGH40N60UFD , STGE50NC60VD , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD .
History: STGE50NC60WD
Keywords - STGE200NB60S transistor spec
STGE200NB60S cross reference
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History: STGE50NC60WD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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