All IGBT. STGE200NB60S Datasheet

 

STGE200NB60S Datasheet and Replacement


   Type Designator: STGE200NB60S
   Type: IGBT
   Marking Code: GE200NB60S
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 112 nS
   Coesⓘ - Output Capacitance, typ: 1100 pF
   Qg ⓘ - Total Gate Charge, typ: 560 nC
   Package: ISOTOP
 

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STGE200NB60S Datasheet (PDF)

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STGE200NB60S

STGE200NB60SN-channel 150A - 600V - ISOTOPLow drop PowerMESH IGBTGeneral featuresVCE(sat)TYPE VCES IC TC(typ.)1.2V 150A 100CSTGE200NB60S 600V1.3V 200A 25C High input impedance (voltage driven)ISOTOP Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capabilityDescriptionInternal schematic diagramUsi

Datasheet: STGD5NB120SZ , STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , FGH40N60UFD , STGE50NC60VD , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD .

Keywords - STGE200NB60S transistor datasheet

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