GT15G101 Datasheet and Replacement
Type Designator: GT15G101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Package: TO220F
GT15G101 substitution
GT15G101 Datasheet (PDF)
gt15g101.pdf
GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V (sat) = 8V (Max.) (I = 170A) CE C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V
Datasheet: GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , RJP63K2DPP-M0 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 .
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