GT15G101 Datasheet. Specs and Replacement

Type Designator: GT15G101

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 40 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: TO220F

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GT15G101 datasheet

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GT15G101

GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V (sat) = 8V (Max.) (I = 170A) CE C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 25 V ... See More ⇒

Specs: GA600GD25S, GA75TS120U, GA75TS60U, GT10G101, GT10J301, GT10J311, GT10Q301, GT10Q311, RJP63K2DPP-M0, GT15J101, GT15J102, GT15J103, GT15N101, GT15Q101, GT15Q301, GT15Q311, GT20D101

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