All IGBT. GT15G101 Datasheet

 

GT15G101 Datasheet and Replacement


   Type Designator: GT15G101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Package: TO220F
      - IGBT Cross-Reference

 

GT15G101 Datasheet (PDF)

 ..1. Size:177K  toshiba
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GT15G101

GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V (sat) = 8V (Max.) (I = 170A) CE C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V

Datasheet: GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , RJP63K2DPP-M0 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 .

History: IXGT20N120B | APT40GP60BG

Keywords - GT15G101 transistor datasheet

 GT15G101 cross reference
 GT15G101 equivalent finder
 GT15G101 lookup
 GT15G101 substitution
 GT15G101 replacement

 

 
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