All IGBT. GT15J102 Datasheet

 

GT15J102 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT15J102
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO220F

 GT15J102 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15J102 Datasheet (PDF)

 7.1. Size:307K  toshiba
 gt15j101.pdf

GT15J102 GT15J102

 7.2. Size:295K  toshiba
 gt15j103.pdf

GT15J102 GT15J102

 9.1. Size:512K  toshiba
 gt15j301.pdf

GT15J102 GT15J102

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

 9.2. Size:214K  toshiba
 gt15j321.pdf

GT15J102 GT15J102

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed: tf = 0.03 s (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu

Datasheet: GA75TS60U , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , FGH40N60UFD , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y .

 

 
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