All IGBT. SL50T120FZ Datasheet

 

SL50T120FZ Datasheet and Replacement


   Type Designator: SL50T120FZ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 535 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 233 pF
   Qgⓘ - Total Gate Charge, typ: 311 nC
   Package: TO264
      - IGBT Cross-Reference

 

SL50T120FZ Datasheet (PDF)

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SL50T120FZ

SL50T120FZFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Current-

Datasheet: IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , FGH40N60SFD , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 .

History: IRGC16B60KB

Keywords - SL50T120FZ transistor datasheet

 SL50T120FZ cross reference
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