SL50T120FZ Datasheet and Replacement
Type Designator: SL50T120FZ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 233 pF
Qg ⓘ - Total Gate Charge, typ: 311 nC
Package: TO264
SL50T120FZ substitution
SL50T120FZ Datasheet (PDF)
sl50t120fz.pdf

SL50T120FZFeatures Extremely Efficient Trench with FieldStop Technology TJmax =175C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10s Short Circuit CapabilityApplications Solar Inverter UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage V 1200 VCES100 AIc T=25Collector Current-
Datasheet: IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , GT50JR22 , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 .
History: BT40N60BNF
Keywords - SL50T120FZ transistor datasheet
SL50T120FZ cross reference
SL50T120FZ equivalent finder
SL50T120FZ lookup
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SL50T120FZ replacement
History: BT40N60BNF



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