SKW25N120 IGBT. Datasheet pdf. Equivalent
Type Designator: SKW25N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 313 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 46 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Package: TO247
SKW25N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKW25N120 Datasheet (PDF)
skw25n120.pdf
SKW25N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiode 40lower Eoff compared to previous generationC Short circuit withstand time 10 s Designed for:- Motor controls- InverterGE- SMPS NPT-Technology offers:- very tight parameter distribution- high ruggedness, temperature stable behaviourPG-TO-247-3- p
skw25n120g.pdf
SKW25N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 40lower Eoff compared to previous generation C Short circuit withstand time 10 s Designed for: - Motor controls - Inverter GE- SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - para
Datasheet: IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , RJP30H2A , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 .
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