SKW25N120 Datasheet. Specs and Replacement

Type Designator: SKW25N120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 313 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 46 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 260 pF

Package: TO247

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SKW25N120 datasheet

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 skw25n120.pdf pdf_icon

SKW25N120

SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode 40lower Eoff compared to previous generation C Short circuit withstand time 10 s Designed for - Motor controls - Inverter G E - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - p... See More ⇒

 0.1. Size:324K  infineon
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SKW25N120

SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 40lower Eoff compared to previous generation C Short circuit withstand time 10 s Designed for - Motor controls - Inverter G E - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - para... See More ⇒

Specs: IKB20N60T, IKW20N60T, IKW30N60T, SL50T120FZ, IKW75N60T, SKB02N120, SKW07N120, SKW15N120, IXGH60N60, SKB02N60, SKB04N60, SKA06N60, SKB06N60, SKW10N60A, SKB15N60, SKW15N60, SKW20N60

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