All IGBT. SKW25N120 Datasheet

 

SKW25N120 Datasheet and Replacement


   Type Designator: SKW25N120
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K25N120
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 313 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 46 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qg ⓘ - Total Gate Charge, typ: 225 nC
   Package: TO247
 

 SKW25N120 substitution

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SKW25N120 Datasheet (PDF)

 ..1. Size:476K  infineon
 skw25n120.pdf pdf_icon

SKW25N120

SKW25N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiode 40lower Eoff compared to previous generationC Short circuit withstand time 10 s Designed for:- Motor controls- InverterGE- SMPS NPT-Technology offers:- very tight parameter distribution- high ruggedness, temperature stable behaviourPG-TO-247-3- p

 0.1. Size:324K  infineon
 skw25n120g.pdf pdf_icon

SKW25N120

SKW25N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 40lower Eoff compared to previous generation C Short circuit withstand time 10 s Designed for: - Motor controls - Inverter GE- SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - para

Datasheet: IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , RJP30H2A , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 .

Keywords - SKW25N120 transistor datasheet

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