SKW10N60A IGBT. Datasheet pdf. Equivalent
Type Designator: SKW10N60A
Type: IGBT + Anti-Parallel Diode
Marking Code: K15N60
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 92 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 62 pF
Qgⓘ - Total Gate Charge, typ: 52 nC
Package: TO247
SKW10N60A Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKW10N60A Datasheet (PDF)
skw10n60a.pdf
SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig
skp10n60a skw10n60a.pdf
SKP10N60A SKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig
Datasheet: SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , IXGH60N60 , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2