All IGBT. SKW10N60A Datasheet

 

SKW10N60A Datasheet and Replacement


   Type Designator: SKW10N60A
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K15N60
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 92 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 62 pF
   Qg ⓘ - Total Gate Charge, typ: 52 nC
   Package: TO247
 

 SKW10N60A substitution

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SKW10N60A Datasheet (PDF)

 ..1. Size:442K  infineon
 skw10n60a.pdf pdf_icon

SKW10N60A

SKP10N60A, SKB10N60ASKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 75% lower Eoff compared to previous generationCcombined with low conduction losses Short circuit withstand time 10 s Designed for:- Motor controlsGE- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- hig

 ..2. Size:363K  infineon
 skp10n60a skw10n60a.pdf pdf_icon

SKW10N60A

SKP10N60A SKW10N60AFast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - hig

Datasheet: SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , RJP30E2DPP-M0 , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS .

History: STGB20V60DF | IGC07T120T6L

Keywords - SKW10N60A transistor datasheet

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