GT20G101 IGBT. Datasheet pdf. Equivalent
Type Designator: GT20G101
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Package: IPAK
GT20G101 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT20G101 Datasheet (PDF)
gt20g101.pdf
GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G101 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 130A) CE (sat) C Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V
gt20g102.pdf
GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8.0V (Max.) CE(sat)(I = 130A) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 20
Datasheet: GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , FGH60N60SMD , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 .
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