All IGBT. GT25G101 Datasheet

 

GT25G101 Datasheet and Replacement


   Type Designator: GT25G101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Package: IPAK
      - IGBT Cross-Reference

 

GT25G101 Datasheet (PDF)

 ..1. Size:309K  toshiba
 gt25g101.pdf pdf_icon

GT25G101

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101 Unit in mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat)=8V (Max.) (IC=170A) Enhancement-Mode 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 25 V

 7.1. Size:182K  toshiba
 gt25g102.pdf pdf_icon

GT25G101

GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit: mmSTROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : V = 8V (Max.) (I = 150A) CE (sat) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VGate-Emitter Voltage VGES 20 V

Datasheet: GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , RJP30H1DPD , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 .

History: MM50G120L | 2N6977 | IKP20N65H5 | NCE75ED120VTP | MMGT15H120XB6C | KE703A | BSM50GD170DL

Keywords - GT25G101 transistor datasheet

 GT25G101 cross reference
 GT25G101 equivalent finder
 GT25G101 lookup
 GT25G101 substitution
 GT25G101 replacement

 

 
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