GT25G101 PDF and Equivalents Search

 

GT25G101 Specs and Replacement

Type Designator: GT25G101

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 25 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: IPAK

 GT25G101 Substitution

- IGBT ⓘ Cross-Reference Search

 

GT25G101 datasheet

 ..1. Size:309K  toshiba
 gt25g101.pdf pdf_icon

GT25G101

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage VCE (sat)=8V (Max.) (IC=170A) Enhancement-Mode 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 25 V... See More ⇒

 7.1. Size:182K  toshiba
 gt25g102.pdf pdf_icon

GT25G101

GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V = 8V (Max.) (I = 150A) CE (sat) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 20 V ... See More ⇒

Specs: GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , SGT40N60NPFDPN , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 .

History: DL2G75SH12A

Keywords - GT25G101 transistor spec

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