All IGBT. IHY30N160R2 Datasheet

 

IHY30N160R2 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHY30N160R2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H30R1602
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 68.1 pF
   Qgⓘ - Total Gate Charge, typ: 94 nC
   Package: TO247

 IHY30N160R2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHY30N160R2 Datasheet (PDF)

 ..1. Size:609K  infineon
 ihy30n160r2 rev2 1.pdf

IHY30N160R2 IHY30N160R2

IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages Trench and fieldstop technology offers: GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offer

Datasheet: SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , FGH75T65UPD , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R .

 

 
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