IHY30N160R2 Datasheet and Replacement
Type Designator: IHY30N160R2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 68.1 pF
Package: TO247
- IGBT Cross-Reference
IHY30N160R2 Datasheet (PDF)
ihy30n160r2 rev2 1.pdf
IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages Trench and fieldstop technology offers: GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offer
Datasheet: SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , CRG75T60AK3HD , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R .
History: AP50G60SW
Keywords - IHY30N160R2 transistor datasheet
IHY30N160R2 cross reference
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History: AP50G60SW
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