IHY30N160R2 Specs and Replacement
Type Designator: IHY30N160R2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Coesⓘ - Output Capacitance, typ: 68.1 pF
Package: TO247
IHY30N160R2 Substitution - IGBT ⓘ Cross-Reference Search
IHY30N160R2 datasheet
ihy30n160r2 rev2 1.pdf
IHY30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages Trench and fieldstop technology offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offer... See More ⇒
Specs: SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IKW40T120 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R .
Keywords - IHY30N160R2 transistor spec
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