IKU04N60R Datasheet. Specs and Replacement
Type Designator: IKU04N60R 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 8 nS
Coesⓘ - Output Capacitance, typ: 18 pF
Package: TO251
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IKU04N60R datasheet
iku04n60r.pdf
IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60R, IKU04N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD04N60R, IKU04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R... See More ⇒
Specs: IKW15N120H3, IKW25N120H3, IKW40N120H3, IKD10N60R, IKU10N60R, IKD15N60R, IKU15N60R, IKD04N60R, GT30G122, IKD06N60R, IKU06N60R, IKW20N60H3, IKW30N60H3, IHW40N60RF, IHW30N110R3, IKW40N60H3, IKB20N60H3
Keywords - IKU04N60R transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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