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IKU04N60R Spec and Replacement


   Type Designator: IKU04N60R
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 18 pF
   Package: TO251

 IKU04N60R Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKU04N60R specs

 ..1. Size:1802K  infineon
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IKU04N60R

IGBT IGBT with integrated diode in packages offering space saving advantage IKD04N60R, IKU04N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD04N60R, IKU04N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R... See More ⇒

Specs: IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , GT30G122 , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 .

History: STGB10NB37LZ

Keywords - IKU04N60R transistor spec

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