All IGBT. SGB15N60 Datasheet

 

SGB15N60 Datasheet and Replacement


   Type Designator: SGB15N60
   Type: IGBT
   Marking Code: G15N60
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 139 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 31 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 84 pF
   Qg ⓘ - Total Gate Charge, typ: 76 nC
   Package: TO263
 

 SGB15N60 substitution

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SGB15N60 Datasheet (PDF)

 ..1. Size:788K  infineon
 sgb15n60.pdf pdf_icon

SGB15N60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

 0.1. Size:813K  infineon
 sgb15n60hs.pdf pdf_icon

SGB15N60

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 0.2. Size:815K  infineon
 sgb15n60hs .pdf pdf_icon

SGB15N60

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

 0.3. Size:791K  infineon
 sgb15n60g.pdf pdf_icon

SGB15N60

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

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Datasheet: SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , SGB10N60A , SGW25N120 , SGW10N60A , GT50JR22 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 .

Keywords - SGB15N60 transistor datasheet

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