GT25Q301 Datasheet and Replacement
Type Designator: GT25Q301
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Package: TO264
- IGBT Cross-Reference
GT25Q301 Datasheet (PDF)
gt25q301.pdf
GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Unit: mmMotor Control Applications Third-generation IGBT Enhancement mode type High speed: tf = 0.32 s (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25
Datasheet: GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT30F126 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , GT50G102 .
History: VS-GB200NH120N | ISL9V5045S3 | IRGSL4B60KD1 | DIM800XSM45-TS001 | CRG05T60A44S-G
Keywords - GT25Q301 transistor datasheet
GT25Q301 cross reference
GT25Q301 equivalent finder
GT25Q301 lookup
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History: VS-GB200NH120N | ISL9V5045S3 | IRGSL4B60KD1 | DIM800XSM45-TS001 | CRG05T60A44S-G
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