GT25Q301 Specs and Replacement
Type Designator: GT25Q301
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: TO264
GT25Q301 Substitution - IGBT ⓘ Cross-Reference Search
GT25Q301 datasheet
gt25q301.pdf
GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 ... See More ⇒
Specs: GT20G102, GT20J301, GT20J311, GT25G101, GT25G102, GT25H101, GT25J101, GT25Q101, FGA60N65SMD, GT30J301, GT30J311, GT30J322, GT40M101, GT40M301, GT40T301, GT50G101, GT50G102
Keywords - GT25Q301 transistor spec
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