SGI02N120 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGI02N120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 62 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6.2 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 20 pF
   Package: TO262

SGI02N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGI02N120 Datasheet (PDF)

..1. Size:374K infineon
sgi02n120.pdf

SGP02N120 SGD02N120, SGI02N120Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: GE- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-

..2. Size:372K infineon
sgp02n120 sgd02n120 sgi02n120.pdf