SGI02N120 Specs and Replacement
Type Designator: SGI02N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 62 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 20 pF
Package: TO262
SGI02N120 Substitution - IGBT ⓘ Cross-Reference Search
SGI02N120 datasheet
sgi02n120.pdf
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒
sgp02n120 sgd02n120 sgi02n120.pdf
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒
sgp02n120 sgd02n120 sgi02n120g.pdf
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-... See More ⇒
Specs: SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , SGT40N60NPFDPN , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS .
Keywords - SGI02N120 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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