IGW03N120H2 IGBT. Datasheet pdf. Equivalent

   Type Designator: IGW03N120H2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 62.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 9.6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 5.2 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Package: TO247

IGW03N120H2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IGW03N120H2 Datasheet (PDF)

..1. Size:336K infineon
igp03n120h2 igw03n120h2.pdf

IGP03N120H2 IGW03N120H2HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

..2. Size:341K infineon
igw03n120h2.pdf