GT40M101 PDF and Equivalents Search

 

GT40M101 Specs and Replacement

Type Designator: GT40M101

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 90 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO3P

 GT40M101 Substitution

- IGBTⓘ Cross-Reference Search

 

GT40M101 datasheet

 ..1. Size:327K  toshiba
 gt40m101.pdf pdf_icon

GT40M101

GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT40M101 Unit mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed tf = 0.4 s (Max.) Low saturation voltage VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 900 V Gate-Emitter Voltage V... See More ⇒

 9.1. Size:259K  toshiba
 gt40m301.pdf pdf_icon

GT40M101

GT40M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit mm HIGH POWER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT t = 0.25 s (TYP.) f FRD trr = 0.7 s (TYP.) Low Saturation Voltage V = 3.4V (MAX.) CE (sat) MAXIMUM RATINGS (Ta = 25 C) CHARACTE... See More ⇒

Specs: GT25G102, GT25H101, GT25J101, GT25Q101, GT25Q301, GT30J301, GT30J311, GT30J322, RJP63F3DPP-M0, GT40M301, GT40T301, GT50G101, GT50G102, GT50J101, GT50J102, GT50J301, GT50J322

Keywords - GT40M101 transistor spec

 GT40M101 cross reference
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