SIW50N65G2H2G Specs and Replacement
Type Designator: SIW50N65G2H2G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 116 pF
Package: TO247
SIW50N65G2H2G Substitution - IGBT ⓘ Cross-Reference Search
SIW50N65G2H2G datasheet
Specs: AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D , AUIRGP4063D , AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , FGL60N100BNTD , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD .
Keywords - SIW50N65G2H2G transistor spec
SIW50N65G2H2G cross reference
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SIW50N65G2H2G substitution
SIW50N65G2H2G replacement
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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