All IGBT. SIW50N65G2H2G Datasheet

 

SIW50N65G2H2G Datasheet and Replacement


   Type Designator: SIW50N65G2H2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 116 pF
   Package: TO247
      - IGBT Cross-Reference

 

SIW50N65G2H2G Datasheet (PDF)

 ..1. Size:711K  cn super semi
 siw50n65g2h2g.pdf pdf_icon

SIW50N65G2H2G

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*50N65G2H2GRev. 1.0Jan. 2024www.supersemi.com.cnSIW50N65G2H2G650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 50 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 4.1. Size:709K  cn super semi
 siw50n65g2l2g.pdf pdf_icon

SIW50N65G2H2G

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*50N65G2L2GRev. 1.0Jan. 2024www.supersemi.com.cnSIW50N65G2L2G650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 50 Atechnology. The SJ-IGBT series provides lowVCE(sat)

Datasheet: AUIRGP35B60PD , AUIRGP35B60PD-E , AUIRGP4062D , AUIRGP4063D , AUIRGP4066D1 , AUIRGP50B60PD1 , AUIRGPS4067D1 , AUIRGR4045D , XNF15N60T , AUIRGS30B60K , SIW50N65G2L2G , SIW75N65G2H2A , AUIRGSL30B60K , AUIRGU4045D , IRG4BC10SD-L , IRG4BC10SD-S , IRG4BC15MD .

History: HCKW75N65BH2 | FF1200R17KE3 | RJP60V0DPM | MG300N1US1 | GT10G101 | MIXA600PF650TSF | RJH60V2BDPP-M0

Keywords - SIW50N65G2H2G transistor datasheet

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