IRG4PC50SD Datasheet. Specs and Replacement

Type Designator: IRG4PC50SD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 70 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.28 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Package: TO247

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IRG4PC50SD datasheet

 0.1. Size:1836K  international rectifier
 irg4pc50sdpbf.pdf pdf_icon

IRG4PC50SD

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 5.1. Size:167K  international rectifier
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IRG4PC50SD

D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

 5.2. Size:144K  international rectifier
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IRG4PC50SD

D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( ... See More ⇒

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Specs: IRG4BC40WL, IRG4BC40WS, IRG4BH20K-L, IRG4BH20K-S, IRG4IBC10UD, IRG4IBC30S, IRG4PC20U, IRG4PC50F-E, FGH60N60SMD, IRG4PC60F, IRG4PC60U-P, IRG4PH40UD2-E, IRG4PH50S-E, IRG4PSH71U, IRG4PSH71UD, IRG4RC20F, IRG6B330UD

Keywords - IRG4PC50SD transistor spec

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