IRG4PC50SD Datasheet and Replacement
Type Designator: IRG4PC50SD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.28 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO247
IRG4PC50SD Datasheet (PDF)
irg4pc50s.pdf
D IRG4PC50S I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
irg4pc50s-p.pdf
D IRG4PC50S-PStandard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating frequencies (
Datasheet: IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , MBQ60T65PES , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD .
History: T0500NB25E
Keywords - IRG4PC50SD transistor datasheet
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History: T0500NB25E
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