All IGBT. IRG4PC50SD Datasheet

 

IRG4PC50SD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PC50SD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.36V

Maximum Collector Current |Ic|, A: 70A

Package: TO247

IRG4PC50SD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC50SD Datasheet (PDF)

1.1. irg4pc50s.pdf Size:164K _international_rectifier

IRG4PC50SD
IRG4PC50SD

D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard TO

1.2. irg4pc50s-p.pdf Size:144K _international_rectifier

IRG4PC50SD
IRG4PC50SD

D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard

1.3. irg4pc50s.pdf Size:167K _igbt_a

IRG4PC50SD
IRG4PC50SD

 D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry st

Datasheet: IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IXGR40N60C2D1 , IRG4PC60F , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD .

 


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