All IGBT. IRG6B330UD Datasheet

 

IRG6B330UD Datasheet and Replacement


   Type Designator: IRG6B330UD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 160 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.18 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 141 pF
   Qg ⓘ - Total Gate Charge, typ: 85 nC
   Package: TO220AB
 

 IRG6B330UD substitution

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IRG6B330UD Datasheet (PDF)

 ..1. Size:270K  international rectifier
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IRG6B330UD

PD - 96304IRG6B330UDPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 70A 1.69 VCircuits in PDP ApplicationsIRP max @ TC= 25C A250l Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor Improved Panel Efficiencyl High Repetitive Peak Current CapabilityCl L

Datasheet: IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , RJP30E2DPP-M0 , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U .

Keywords - IRG6B330UD transistor datasheet

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