IRG6B330UD Spec and Replacement
Type Designator: IRG6B330UD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 160 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.18 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 141 pF
Package: TO220AB
IRG6B330UD Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG6B330UD specs
irg6b330ud.pdf
PD - 96304 IRG6B330UDPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 70A 1.69 V Circuits in PDP Applications IRP max @ TC= 25 C A 250 l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for Improved Panel Efficiency l High Repetitive Peak Current Capability C l L... See More ⇒
Specs: IRG4PC50SD , IRG4PC60F , IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , FGA25N120ANTD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U .
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