All IGBT. IRGB20B60PD1 Datasheet

 

IRGB20B60PD1 Datasheet and Replacement


   Type Designator: IRGB20B60PD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 215 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 5 nS
   Coesⓘ - Output Capacitance, typ: 95 pF
   Qgⓘ - Total Gate Charge, typ: 68 nC
   Package: TO220AB
      - IGBT Cross-Reference

 

IRGB20B60PD1 Datasheet (PDF)

 ..1. Size:355K  international rectifier
 irgb20b60pd1.pdf pdf_icon

IRGB20B60PD1

PD - 94613ASMPS IGBT IRGB20B60PD1WARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Features RCE(on) typ. = 158mE NPT Technology, P

Datasheet: IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , NGD8201N , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D .

History: RJP63F3DPP-M0

Keywords - IRGB20B60PD1 transistor datasheet

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