IRGB20B60PD1 IGBT. Datasheet pdf. Equivalent
Type Designator: IRGB20B60PD1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 215 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 5 nS
Coesⓘ - Output Capacitance, typ: 95 pF
Qgⓘ - Total Gate Charge, typ: 68 nC
Package: TO220AB
IRGB20B60PD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGB20B60PD1 Datasheet (PDF)
irgb20b60pd1.pdf
PD - 94613ASMPS IGBT IRGB20B60PD1WARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Features RCE(on) typ. = 158mE NPT Technology, P
Datasheet: IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , GT30J122 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2