IRGB30B60K Datasheet. Specs and Replacement

Type Designator: IRGB30B60K  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 370 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 78 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO220AB

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IRGB30B60K datasheet

 ..1. Size:339K  international rectifier
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IRGB30B60K

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. ... See More ⇒

Specs: IRG7S313U, IRG7S319U, IRG7SC12F, IRG7SC28U, IRGB10B60KD, IRGB14C40L, IRGB15B60KD, IRGB20B60PD1, IRG7IC28U, IRGB4045D, IRGB4056D, IRGB4059D, IRGB4060D, IRGB4061D, IRGB4062D, IRGB4064D, IRGB4086

Keywords - IRGB30B60K transistor spec

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