All IGBT. IRGB30B60K Datasheet

 

IRGB30B60K Datasheet and Replacement


   Type Designator: IRGB30B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 370 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qg ⓘ - Total Gate Charge, typ: 102 nC
   Package: TO220AB
 

 IRGB30B60K substitution

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IRGB30B60K Datasheet (PDF)

 ..1. Size:339K  international rectifier
 irgb30b60k.pdf pdf_icon

IRGB30B60K

PD - 94799AIRGB30B60KIRGS30B60KIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeaturesIC = 50A, TC=100C Low VCE (on) Non Punch Through IGBT Technology.at TJ=175C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated at 175C.VCE(on) typ.

Datasheet: IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGP4066D , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 .

History: STGWA25S120DF3 | IRG4PH50UD

Keywords - IRGB30B60K transistor datasheet

 IRGB30B60K cross reference
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