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IRGB30B60K Spec and Replacement


   Type Designator: IRGB30B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 370 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Package: TO220AB

 IRGB30B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGB30B60K specs

 ..1. Size:339K  international rectifier
 irgb30b60k.pdf pdf_icon

IRGB30B60K

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. ... See More ⇒

Specs: IRG7S313U , IRG7S319U , IRG7SC12F , IRG7SC28U , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , SGP30N60 , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 .

Keywords - IRGB30B60K transistor spec

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