IRGB5B120KD PDF and Equivalents Search

 

IRGB5B120KD Specs and Replacement


   Type Designator: IRGB5B120KD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 89 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 12 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   tr ⓘ - Rise Time, typ: 19 nS
   Coesⓘ - Output Capacitance, typ: 33 pF
   Package: TO220AB
 

 IRGB5B120KD Substitution

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IRGB5B120KD datasheet

 ..1. Size:330K  international rectifier
 irgb5b120kd.pdf pdf_icon

IRGB5B120KD

PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 6.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coeffici... See More ⇒

Specs: IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , TGAN60N60F2DS , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD .

History: DF1400R12IP4D

Keywords - IRGB5B120KD transistor spec

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