IRGB5B120KD Datasheet and Replacement
Type Designator: IRGB5B120KD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 89 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 19 nS
Coesⓘ - Output Capacitance, typ: 33 pF
Qg ⓘ - Total Gate Charge, typ: 25 nC
Package: TO220AB
IRGB5B120KD substitution
IRGB5B120KD Datasheet (PDF)
irgb5b120kd.pdf
PD - 94385FIRGB5B120KDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 1200V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 6.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coeffici
Datasheet: IRGB4059D , IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , RJH60F5DPQ-A0 , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD .
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History: GT45F122 | IRGB4086
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