IRGB5B120KD Datasheet. Specs and Replacement

Type Designator: IRGB5B120KD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 89 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃

tr ⓘ - Rise Time, typ: 19 nS

Coesⓘ - Output Capacitance, typ: 33 pF

Package: TO220AB

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IRGB5B120KD datasheet

 ..1. Size:330K  international rectifier
 irgb5b120kd.pdf pdf_icon

IRGB5B120KD

PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 6.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coeffici... See More ⇒

Specs: IRGB4059D, IRGB4060D, IRGB4061D, IRGB4062D, IRGB4064D, IRGB4086, IRGB4B60K, IRGB4B60KD1, IRG4PC50UD, IRGB6B60K, IRGB6B60KD, IRGB8B60K, IRGI4086, IRGI4090, IRGIB10B60KD1, IRGIB15B60KD1, IRGIB6B60KD

Keywords - IRGB5B120KD transistor spec

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