IRGP4068D PDF and Equivalents Search

 

IRGP4068D Specs and Replacement


   Type Designator: IRGP4068D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 96 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: TO247
 

 IRGP4068D Substitution

   - IGBT ⓘ Cross-Reference Search

 

IRGP4068D datasheet

 ..1. Size:263K  international rectifier
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IRGP4068D

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 0.1. Size:248K  international rectifier
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IRGP4068D

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 0.2. Size:326K  international rectifier
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IRGP4068D

PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low Switching Losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C ... See More ⇒

 0.3. Size:263K  international rectifier
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IRGP4068D

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Specs: IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRG4PF50W , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP .

Keywords - IRGP4068D transistor spec

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