IRGP4068D Datasheet. Specs and Replacement

Type Designator: IRGP4068D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 330 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 96 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

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IRGP4068D datasheet

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IRGP4068D

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IRGP4068D

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IRGP4068D

PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low Switching Losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C ... See More ⇒

 0.3. Size:263K  international rectifier
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IRGP4068D

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Specs: IRGP4050, IRGP4062D, IRGP4063, IRGP4063D, IRGP4066, IRGP4066D, IRGP4066D-E, IRGP4066-E, IRG4PF50W, IRGP4068D-E, IRGP4069, IRGP4069D, IRGP4072D, IRGP4086, IRGP50B60PD, IRGP50B60PD1, IRGP50B60PD1-EP

Keywords - IRGP4068D transistor spec

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