All IGBT. IRGP4068D Datasheet

 

IRGP4068D Datasheet and Replacement


   Type Designator: IRGP4068D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 96 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 245 pF
   Qg ⓘ - Total Gate Charge, typ: 95 nC
   Package: TO247
 

 IRGP4068D substitution

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IRGP4068D Datasheet (PDF)

 ..1. Size:263K  international rectifier
 irgp4068d.pdf pdf_icon

IRGP4068D

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

 0.1. Size:248K  international rectifier
 irgp4068dpbf irgp4068d-epbf.pdf pdf_icon

IRGP4068D

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

 0.2. Size:326K  international rectifier
 irgp4068dpbf.pdf pdf_icon

IRGP4068D

PD - 97250IRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

 0.3. Size:263K  international rectifier
 irgp4068d-e.pdf pdf_icon

IRGP4068D

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C

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Datasheet: IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , GT60N321 , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP .

History: GT60N321

Keywords - IRGP4068D transistor datasheet

 IRGP4068D cross reference
 IRGP4068D equivalent finder
 IRGP4068D lookup
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