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IRGS6B60K Specs and Replacement


   Type Designator: IRGS6B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 90 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: D2PAK
 

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IRGS6B60K specs

 ..1. Size:249K  international rectifier
 irgs6b60k.pdf pdf_icon

IRGS6B60K

PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 7.0A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc > 10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Con... See More ⇒

 0.1. Size:311K  international rectifier
 irgs6b60kd.pdf pdf_icon

IRGS6B60K

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (... See More ⇒

Specs: IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , FGPF4536 , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 .

Keywords - IRGS6B60K transistor spec

 IRGS6B60K cross reference
 IRGS6B60K equivalent finder
 IRGS6B60K lookup
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