IRGS6B60K Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRGS6B60K Specs and Replacement

Type Designator: IRGS6B60K

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 90 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: D2PAK

IRGS6B60K Substitution

- IGBT ⓘ Cross-Reference Search

IRGS6B60K datasheet

..1. Size:249K international rectifier
irgs6b60k.pdf pdf_icon

PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 7.0A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc > 10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Con... See More ⇒

0.1. Size:311K international rectifier
irgs6b60kd.pdf pdf_icon

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (... See More ⇒

Specs: IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , FGPF4536 , IRGS6B60KD , IRGS8B60K , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 .