All IGBT. IRGS8B60K Datasheet

 

IRGS8B60K Datasheet and Replacement


   Type Designator: IRGS8B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Package: D2PAK
 

 IRGS8B60K substitution

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IRGS8B60K Datasheet (PDF)

 ..1. Size:472K  international rectifier
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IRGS8B60K

PD - 94545CIRGB8B60KIRGS8B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL8B60KCFeaturesVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 20A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. Gtsc>10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control

Datasheet: IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IXGH60N60 , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 .

Keywords - IRGS8B60K transistor datasheet

 IRGS8B60K cross reference
 IRGS8B60K equivalent finder
 IRGS8B60K lookup
 IRGS8B60K substitution
 IRGS8B60K replacement

 

 
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