All IGBT. IRGS8B60K Datasheet

 

IRGS8B60K IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS8B60K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 167

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Collector Current |Ic|, A: 28

Package: D2Pak

IRGS8B60K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGS8B60K Datasheet (PDF)

0.1. irgs8b60k.pdf Size:472K _international_rectifier

IRGS8B60K IRGS8B60K

PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 20A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc>10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control

Datasheet: IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , GT60M303 , IRGSL10B60KD , IRGSL14C40L , IRGSL15B60KD , IRGSL30B60K , IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 .

 

 
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