All IGBT. GT60M101 Datasheet

 

GT60M101 Datasheet and Replacement


   Type Designator: GT60M101
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: TO264
 

 GT60M101 substitution

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GT60M101 Datasheet (PDF)

 ..1. Size:142K  toshiba
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GT60M101

 7.1. Size:248K  toshiba
 gt60m104.pdf pdf_icon

GT60M101

 7.2. Size:287K  toshiba
 gt50q101 gt50t101 gt60j101 gt60m102 gt60m103 gt75g101.pdf pdf_icon

GT60M101

 9.1. Size:297K  toshiba
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GT60M101

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Datasheet: GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , SGH80N60UFD , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 .

Keywords - GT60M101 transistor datasheet

 GT60M101 cross reference
 GT60M101 equivalent finder
 GT60M101 lookup
 GT60M101 substitution
 GT60M101 replacement

 

 
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