All IGBT. GT60M101 Datasheet

 

GT60M101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT60M101

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 700

Package: TO264

GT60M101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT60M101 Datasheet (PDF)

7.1. gt60m104.pdf Size:248K _toshiba

GT60M101
GT60M101

9.1. gt60m303.pdf Size:420K _toshiba

GT60M101
GT60M101

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

Datasheet: GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , G7N60C , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 .

 

 
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