All IGBT. GT60M101 Datasheet

 

GT60M101 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT60M101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO264

 GT60M101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT60M101 Datasheet (PDF)

 ..1. Size:142K  toshiba
 gt60m101.pdf

GT60M101 GT60M101

 7.1. Size:248K  toshiba
 gt60m104.pdf

GT60M101 GT60M101

 7.2. Size:287K  toshiba
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GT60M101

 9.1. Size:297K  toshiba
 gt60m301.pdf

GT60M101 GT60M101

 9.2. Size:204K  toshiba
 gt60m324.pdf

GT60M101 GT60M101

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit: mmSixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.11s (typ.) (IC = 60A) FRD : trr = 0.8s (typ.) (di/dt = -20 A/s) Low saturation

 9.3. Size:420K  toshiba
 gt60m303.pdf

GT60M101 GT60M101

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

 9.4. Size:279K  toshiba
 gt60m302.pdf

GT60M101 GT60M101

Datasheet: GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , SGH80N60UFD , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 .

 

 
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