GT60M101 Datasheet. Specs and Replacement

Type Designator: GT60M101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO264

  📄📄 Copy 

 GT60M101 Substitution

- IGBTⓘ Cross-Reference Search

 

GT60M101 datasheet

 ..1. Size:142K  toshiba
 gt60m101.pdf pdf_icon

GT60M101

... See More ⇒

 7.1. Size:248K  toshiba
 gt60m104.pdf pdf_icon

GT60M101

... See More ⇒

 7.2. Size:287K  toshiba
 gt50q101 gt50t101 gt60j101 gt60m102 gt60m103 gt75g101.pdf pdf_icon

GT60M101

... See More ⇒

 9.1. Size:297K  toshiba
 gt60m301.pdf pdf_icon

GT60M101

... See More ⇒

SHOW MORE

Specs: GT50S101, GT50T101, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, CRG75T60AK3HD, GT60M102, GT60M103, GT60M301, GT60M302, GT60M303, GT75G101, GT80J101, GT8G101

Keywords - GT60M101 transistor spec

 GT60M101 cross reference
 GT60M101 equivalent finder
 GT60M101 lookup
 GT60M101 substitution
 GT60M101 replacement