GT60M101 - аналоги и описание IGBT

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit mm Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.11 s (typ.) (IC = 60A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.25 s (TYP.) FRD trr = 0.7 s (TYP.) Low saturation voltage VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)