GT60M102 Datasheet. Specs and Replacement

Type Designator: GT60M102  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃

Package: TO3P

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GT60M102 datasheet

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Specs: GT50T101, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, GT60M101, SGH80N60UFD, GT60M103, GT60M301, GT60M302, GT60M303, GT75G101, GT80J101, GT8G101, GT8G102

Keywords - GT60M102 transistor spec

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