GT60M102 Datasheet and Replacement
Type Designator: GT60M102
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Package: TO3P
GT60M102 substitution
GT60M102 Datasheet (PDF)
Datasheet: GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , IKW50N60T , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 .
Keywords - GT60M102 transistor datasheet
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