All IGBT. GT60M102 Datasheet

 

GT60M102 Datasheet and Replacement


   Type Designator: GT60M102
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO3P
      - IGBT Cross-Reference

 

GT60M102 Datasheet (PDF)

 ..1. Size:287K  toshiba
 gt50q101 gt50t101 gt60j101 gt60m102 gt60m103 gt75g101.pdf pdf_icon

GT60M102

 7.1. Size:142K  toshiba
 gt60m101.pdf pdf_icon

GT60M102

 7.2. Size:248K  toshiba
 gt60m104.pdf pdf_icon

GT60M102

 9.1. Size:297K  toshiba
 gt60m301.pdf pdf_icon

GT60M102

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Datasheet: GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT30F133 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 .

History: APTGF150A120T | IXST35N120B | SKM145GB066D | MSG100D350FHS | IXST45N120B | MSG20T65HPT1 | MSG40T120FQC

Keywords - GT60M102 transistor datasheet

 GT60M102 cross reference
 GT60M102 equivalent finder
 GT60M102 lookup
 GT60M102 substitution
 GT60M102 replacement

 

 
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