GT60M302 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

GT60M302 Specs and Replacement

   Type Designator: GT60M302
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   tr ⓘ - Rise Time, typ: 250 nS
   Package: TO264

GT60M302 Substitution

- IGBT ⓘ Cross-Reference Search

GT60M302 datasheet

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gt60m303.pdf pdf_icon

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.25 s (TYP.) FRD trr = 0.7 s (TYP.) Low saturation voltage VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) ... See More ⇒

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GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Unit mm Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.11 s (typ.) (IC = 60A) FRD trr = 0.8 s (typ.) (di/dt = -20 A/ s) Low saturation ... See More ⇒

Specs: GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , JT075N065WED , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 .