GT60M303 IGBT. Datasheet pdf. Equivalent

Type Designator: GT60M303

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Gate-Emitter Voltage |Veg|, V: 15V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: TO264

GT60M303 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60M303 Datasheet (PDF)

1.1. gt60m303.pdf Size:420K _toshiba

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25?s (TYP.) FRD : trr = 0.7?s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Datasheet: GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT15Q101 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB .

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