GT60M303 IGBT. Datasheet pdf. Equivalent
Type Designator: GT60M303
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 900
Collector-Emitter saturation Voltage |Vcesat|, V: 2.7
Maximum Gate-Emitter Voltage |Veg|, V: 15
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 400
Package: TO264
GT60M303 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT60M303 IGBT. Datasheet pdf. Equivalent
Type Designator: GT60M303
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 900
Collector-Emitter saturation Voltage |Vcesat|, V: 2.7
Maximum Gate-Emitter Voltage |Veg|, V: 15
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 400
Package: TO264
GT60M303 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT60M303 Datasheet (PDF)
0.1. gt60m303.pdf 
Size:420K _toshiba
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25s (TYP.) FRD : trr = 0.7s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
9.1. gt60m104.pdf Size:248K _toshiba
Datasheet: GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT15Q101 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB .
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