KGH25N120NDA Datasheet. Specs and Replacement

Type Designator: KGH25N120NDA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO3PN

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KGH25N120NDA datasheet

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KGH25N120NDA

SEMICONDUCTOR KGH25N120NDA TECHNICAL DATA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology MAXIMUM RATING... See More ⇒

Specs: FGM623S, MGD623N, MGD623S, FGW50N65WE, SKW030N065, GM200HB12CT, GM400HB06CT, KGH15N120NDA, FGA60N65SMD, KGT12N120NDH, KGT15N120KDA, KGT15N120NDA, KGT15N120NDH, KGT15N60FDA, KGT20N60KDA, KGT25N120KDA, KGT25N120NDA

Keywords - KGH25N120NDA transistor spec

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