GT80J101 Datasheet. Specs and Replacement

Type Designator: GT80J101  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: TO264

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GT80J101 datasheet

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GT80J101

GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N - CHANNEL MOS TYPE GT80J101 Unit mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed t = 0.40 s (Max.) f Low Saturation Voltage V = 3.5V (Max.) CE (sat) Enhancement-Mode MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitte... See More ⇒

Specs: GT60J101, GT60M101, GT60M102, GT60M103, GT60M301, GT60M302, GT60M303, GT75G101, IKW50N60H3, GT8G101, GT8G102, GT8G103, GT8G103LB, GT8G121, GT8G121LB, GT8J101, GT8J102

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