All IGBT. GT80J101 Datasheet

 

GT80J101 Datasheet and Replacement


   Type Designator: GT80J101
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: TO264
 

 GT80J101 substitution

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GT80J101 Datasheet (PDF)

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GT80J101

GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N - CHANNEL MOS TYPE GT80J101 Unit: mmHIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : t = 0.40s (Max.) f Low Saturation Voltage : V = 3.5V (Max.) CE (sat) Enhancement-Mode MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 600 VGate-Emitte

Datasheet: GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , CRG60T60AK3HD , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 .

Keywords - GT80J101 transistor datasheet

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