KGT12N120NDH Datasheet and Replacement
Type Designator: KGT12N120NDH
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 176 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qg ⓘ - Total Gate Charge, typ: 70 nC
Package: TO3PN
KGT12N120NDH substitution
KGT12N120NDH Datasheet (PDF)
kgt12n120ndh.pdf
SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
Datasheet: MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , IRG7IC28U , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH .
History: OST80N65HSMF
Keywords - KGT12N120NDH transistor datasheet
KGT12N120NDH cross reference
KGT12N120NDH equivalent finder
KGT12N120NDH lookup
KGT12N120NDH substitution
KGT12N120NDH replacement
History: OST80N65HSMF
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830