KGT12N120NDH Datasheet. Specs and Replacement

Type Designator: KGT12N120NDH  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 176 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 24 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO3PN

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KGT12N120NDH datasheet

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KGT12N120NDH

SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT... See More ⇒

Specs: MGD623N, MGD623S, FGW50N65WE, SKW030N065, GM200HB12CT, GM400HB06CT, KGH15N120NDA, KGH25N120NDA, YGW40N65F1, KGT15N120KDA, KGT15N120NDA, KGT15N120NDH, KGT15N60FDA, KGT20N60KDA, KGT25N120KDA, KGT25N120NDA, KGT25N120NDH

Keywords - KGT12N120NDH transistor spec

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