All IGBT. KGT12N120NDH Datasheet

 

KGT12N120NDH IGBT. Datasheet pdf. Equivalent


   Type Designator: KGT12N120NDH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 176 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO3PN

 KGT12N120NDH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGT12N120NDH Datasheet (PDF)

 ..1. Size:1077K  kec
 kgt12n120ndh.pdf

KGT12N120NDH KGT12N120NDH

SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

Datasheet: MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , FGA25N120ANTD , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH .

 

 
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