KGT12N120NDH Specs and Replacement
Type Designator: KGT12N120NDH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 176 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 24 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO3PN
KGT12N120NDH Substitution - IGBT ⓘ Cross-Reference Search
KGT12N120NDH datasheet
kgt12n120ndh.pdf
SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT... See More ⇒
Specs: MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , BT40T60ANF , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH .
History: IRG8P50N120KD | NGB8207AN
Keywords - KGT12N120NDH transistor spec
KGT12N120NDH cross reference
KGT12N120NDH equivalent finder
KGT12N120NDH lookup
KGT12N120NDH substitution
KGT12N120NDH replacement
History: IRG8P50N120KD | NGB8207AN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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