All IGBT. KGT12N120NDH Datasheet

 

KGT12N120NDH Datasheet and Replacement


   Type Designator: KGT12N120NDH
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 176 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO3PN
      - IGBT Cross-Reference

 

KGT12N120NDH Datasheet (PDF)

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KGT12N120NDH

SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

Datasheet: MGD623N , MGD623S , FGW50N65WE , SKW030N065 , GM200HB12CT , GM400HB06CT , KGH15N120NDA , KGH25N120NDA , RJP63F3DPP-M0 , KGT15N120KDA , KGT15N120NDA , KGT15N120NDH , KGT15N60FDA , KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH .

History: SRE50N065FSUD6 | GT30F123 | FGA15N120FTD | RJH60F6BDPQ-A0 | 2MBI50N-060 | IRG7I319U | SG50N06D2S

Keywords - KGT12N120NDH transistor datasheet

 KGT12N120NDH cross reference
 KGT12N120NDH equivalent finder
 KGT12N120NDH lookup
 KGT12N120NDH substitution
 KGT12N120NDH replacement

 

 
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