KGT40N60KDA Datasheet. Specs and Replacement

Type Designator: KGT40N60KDA  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO247

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KGT40N60KDA datasheet

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KGT40N60KDA

SEMICONDUCTOR KGT40N60KDA TECHNICAL DATA General Description B A KEC NPT Trench IGBTs offer low switching losses, high energy efficiency O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ FEATURES C 20.85 + 0.30 _ D 3.00 + 0.20 ... See More ⇒

Specs: KGT20N60KDA, KGT25N120KDA, KGT25N120NDA, KGT25N120NDH, KGT25N135NDH, KGT30N120NDA, KGT30N120NDH, KGT30N60KDA, SGT50T65FD1PN, KGT50N60KDA, RJH30E2DPP, IRG4PC60UPBF, APT100GF60B2R, APT100GF60JR, APT100GF60JRD, APT100GF60JU2, APT100GF60JU3

Keywords - KGT40N60KDA transistor spec

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