KGT40N60KDA Datasheet and Replacement
Type Designator: KGT40N60KDA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Qg ⓘ - Total Gate Charge, typ: 170 nC
Package: TO247
KGT40N60KDA substitution
KGT40N60KDA Datasheet (PDF)
kgt40n60kda.pdf

SEMICONDUCTORKGT40N60KDATECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energy efficiencyOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_FEATURES C20.85 + 0.30_D3.00 + 0.20
Datasheet: KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , FGH60N60SFD , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 .
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