All IGBT. KGT40N60KDA Datasheet

 

KGT40N60KDA IGBT. Datasheet pdf. Equivalent


   Type Designator: KGT40N60KDA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 170 nC
   Package: TO247

 KGT40N60KDA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGT40N60KDA Datasheet (PDF)

 ..1. Size:429K  kec
 kgt40n60kda.pdf

KGT40N60KDA KGT40N60KDA

SEMICONDUCTORKGT40N60KDATECHNICAL DATAGeneral DescriptionBAKEC NPT Trench IGBTs offer low switching losses, high energy efficiencyOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_FEATURES C20.85 + 0.30_D3.00 + 0.20

Datasheet: KGT20N60KDA , KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , FGPF4633 , KGT50N60KDA , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 .

 

 
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