All IGBT. KGT50N60KDA Datasheet

 

KGT50N60KDA Datasheet and Replacement


   Type Designator: KGT50N60KDA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 345 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 85 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Qg ⓘ - Total Gate Charge, typ: 200 nC
   Package: TO247
 

 KGT50N60KDA substitution

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KGT50N60KDA Datasheet (PDF)

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KGT50N60KDA

SEMICONDUCTORKGT50N60KDATECHNICAL DATAGeneral DescriptionBKEC NPT Trench IGBTs offer low switching losses, high energy efficiency AOS Kand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.DIM MILLIMETERS_+A 15.90 0.30_B5.00 + 0.20_C20.85 + 0.30FEATURES _D 3.00 + 0.20

Datasheet: KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , IRG7R313U , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 , APT100GT120JU2 .

Keywords - KGT50N60KDA transistor datasheet

 KGT50N60KDA cross reference
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