KGT50N60KDA Specs and Replacement
Type Designator: KGT50N60KDA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 345 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 85 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: TO247
KGT50N60KDA Substitution - IGBT ⓘ Cross-Reference Search
KGT50N60KDA datasheet
kgt50n60kda.pdf
SEMICONDUCTOR KGT50N60KDA TECHNICAL DATA General Description B KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A O S K and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.20 ... See More ⇒
Specs: KGT25N120KDA , KGT25N120NDA , KGT25N120NDH , KGT25N135NDH , KGT30N120NDA , KGT30N120NDH , KGT30N60KDA , KGT40N60KDA , GT30G124 , RJH30E2DPP , IRG4PC60UPBF , APT100GF60B2R , APT100GF60JR , APT100GF60JRD , APT100GF60JU2 , APT100GF60JU3 , APT100GT120JU2 .
Keywords - KGT50N60KDA transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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