All IGBT. GT5J301 Datasheet

 

GT5J301 Datasheet and Replacement


   Type Designator: GT5J301
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 28 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: 2-10R1C
 

 GT5J301 substitution

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GT5J301 Datasheet (PDF)

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GT5J301

GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 5A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 5A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS

Datasheet: GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , GT5G133 , IKW40T120 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 .

Keywords - GT5J301 transistor datasheet

 GT5J301 cross reference
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