All IGBT. GT35J321 Datasheet

 

GT35J321 Datasheet and Replacement


   Type Designator: GT35J321
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 37 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Qg ⓘ - Total Gate Charge, typ: 500 nC
   Package: TO-3PN
 

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GT35J321 Datasheet (PDF)

 ..1. Size:284K  toshiba
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GT35J321

GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Unit: mmCurrent Resonance Inverter Switching Applications Enhancement mode High speed: tf = 0.19 s (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS A

Datasheet: GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , IRG4PF50W , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 .

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