GT35J321 PDF and Equivalents Search

 

GT35J321 Specs and Replacement

Type Designator: GT35J321

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 37 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

Package: TO-3PN

 GT35J321 Substitution

- IGBT ⓘ Cross-Reference Search

 

GT35J321 datasheet

 ..1. Size:284K  toshiba
 gt35j321.pdf pdf_icon

GT35J321

GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Unit mm Current Resonance Inverter Switching Applications Enhancement mode High speed tf = 0.19 s (typ.) (IC = 50 A) Low saturation voltage VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name TO-3P(N)IS A... See More ⇒

Specs: GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT30F125 , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 .

Keywords - GT35J321 transistor spec

 GT35J321 cross reference
 GT35J321 equivalent finder
 GT35J321 lookup
 GT35J321 substitution
 GT35J321 replacement

 

 

 

 

↑ Back to Top
.