GT8N101 PDF and Equivalents Search

 

GT8N101 Specs and Replacement


   Type Designator: GT8N101
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 8 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   tr ⓘ - Rise Time, typ: 150 nS
   Package: TO3P
 

 GT8N101 Substitution

   - IGBT ⓘ Cross-Reference Search

 

GT8N101 datasheet

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 gt8n101.pdf pdf_icon

GT8N101

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Specs: GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT30F133 , GT8Q101 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D .

Keywords - GT8N101 transistor spec

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