GT8N101 Datasheet and Replacement
Type Designator: GT8N101
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: TO3P
GT8N101 substitution
GT8N101 Datasheet (PDF)
Datasheet: GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , CRG75T60AK3HD , GT8Q101 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D .
History: APTGF50TA120P | NGTB30N60S
Keywords - GT8N101 transistor datasheet
GT8N101 cross reference
GT8N101 equivalent finder
GT8N101 lookup
GT8N101 substitution
GT8N101 replacement
History: APTGF50TA120P | NGTB30N60S
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