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APT83GU30B Spec and Replacement


   Type Designator: APT83GU30B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 406 pF
   Package: TO247

 APT83GU30B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT83GU30B specs

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APT83GU30B

APT83GU30B APT83GU30S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. D3PAK Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C switchmode power supplies. G E G C E Low Conduction Loss SSOA rated C Low Gate ... See More ⇒

Specs: APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , FGW75N60HD , APT8GT60KR , APTGF100A120T , APTGF100DA120T , APTGF100DU120T , APTGF100SK120T , APTGF10X120E2 , APTGF10X60BTP2 , APTGF125X60E3 .

History: IRGC100B60UB

Keywords - APT83GU30B transistor spec

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