All IGBT. APT83GU30B Datasheet

 

APT83GU30B Datasheet and Replacement


   Type Designator: APT83GU30B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 406 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT83GU30B Datasheet (PDF)

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APT83GU30B

APT83GU30BAPT83GU30S300V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.D3PAKUsing Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCswitchmode power supplies.G EGCE Low Conduction Loss SSOA ratedC Low Gate

Datasheet: APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , YGW60N65F1A2 , APT8GT60KR , APTGF100A120T , APTGF100DA120T , APTGF100DU120T , APTGF100SK120T , APTGF10X120E2 , APTGF10X60BTP2 , APTGF125X60E3 .

History: MMG75J120U6HN | 2SH29

Keywords - APT83GU30B transistor datasheet

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