APT83GU30B Datasheet. Specs and Replacement

Type Designator: APT83GU30B  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 543 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 406 pF

Package: TO247

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APT83GU30B datasheet

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APT83GU30B

APT83GU30B APT83GU30S 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. D3PAK Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C switchmode power supplies. G E G C E Low Conduction Loss SSOA rated C Low Gate ... See More ⇒

Specs: APT75GP120B2, APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, APT80GP60B2, APT80GP60J, APT80GP60JDF3, GT30G122, APT8GT60KR, APTGF100A120T, APTGF100DA120T, APTGF100DU120T, APTGF100SK120T, APTGF10X120E2, APTGF10X60BTP2, APTGF125X60E3

Keywords - APT83GU30B transistor spec

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