APT8GT60KR Datasheet. Specs and Replacement

Type Designator: APT8GT60KR  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 70 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 17 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 11 nS

Coesⓘ - Output Capacitance, typ: 44 pF

Package: TO220

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APT8GT60KR datasheet

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APT8GT60KR

APT8GT60KR 600V 17A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated R... See More ⇒

Specs: APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, APT80GP60B2, APT80GP60J, APT80GP60JDF3, APT83GU30B, STGB10NB37LZ, APTGF100A120T, APTGF100DA120T, APTGF100DU120T, APTGF100SK120T, APTGF10X120E2, APTGF10X60BTP2, APTGF125X60E3, APTGF125X60TE3

Keywords - APT8GT60KR transistor spec

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