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APT8GT60KR Spec and Replacement


   Type Designator: APT8GT60KR
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 70 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 17 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 11 nS
   Coesⓘ - Output Capacitance, typ: 44 pF
   Package: TO220

 APT8GT60KR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT8GT60KR specs

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APT8GT60KR

APT8GT60KR 600V 17A Thunderbolt IGBT TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G C Low Forward Voltage Drop High Freq. Switching to 150KHz E C Low Tail Current Ultra Low Leakage Current Avalanche Rated R... See More ⇒

Specs: APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , APT83GU30B , KGF75N65KDF , APTGF100A120T , APTGF100DA120T , APTGF100DU120T , APTGF100SK120T , APTGF10X120E2 , APTGF10X60BTP2 , APTGF125X60E3 , APTGF125X60TE3 .

Keywords - APT8GT60KR transistor spec

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