2PG006 Datasheet. Specs and Replacement
Type Designator: 2PG006 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
tr ⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO220F
2PG006 Substitution - IGBTⓘ Cross-Reference Search
2PG006 datasheet
2pg006.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Package Features Code Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
2pg001.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
2pg009.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒
Specs: APTGT75TDU120P, APTGT75X120BTP3, APTGT75X120E3, APTGT75X120TE3, APTLGF140U120T, APTLGF210U120T, APTLGF280U120T, APTLGF70U120T, FGH30S130P, FGW15N120H, FGW15N120HD, FGW15N120VD, FGW40N120H, FGW40N120HD, FGW40N120VD, FGW40N120W, FGW40N120WD
Keywords - 2PG006 transistor spec
2PG006 cross reference
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History: IKW75N65EH5 | IKZ50N65ES5 | IQGB300N120I4 | IKY50N120CH3 | HGT1S7N60B3DS | IKZ75N65ES5 | IRG4PC30FPBF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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