All IGBT. 2PG006 Datasheet

 

2PG006 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2PG006
   Type: IGBT
   Marking Code: DG402RP
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 54 nC
   Package: TO220F

 2PG006 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG006 Datasheet (PDF)

 ..1. Size:398K  panasonic
 2pg006.pdf

2PG006 2PG006

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)

 9.1. Size:300K  panasonic
 2pg001.pdf

2PG006 2PG006

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

 9.2. Size:417K  fuji
 2pg009.pdf

2PG006 2PG006

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

Datasheet: APTGT75TDU120P , APTGT75X120BTP3 , APTGT75X120E3 , APTGT75X120TE3 , APTLGF140U120T , APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , IRG4PC50U , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD .

 

 
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