2PG006 Datasheet and Replacement
Type Designator: 2PG006
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 40 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO220F
- IGBT Cross-Reference
2PG006 Datasheet (PDF)
2pg006.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG006Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Package Features Code Low collector-emitter saturation voltage: VCE(sat)
2pg001.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG001N-channel enhancement mode IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
2pg009.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG009Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
Datasheet: APTGT75TDU120P , APTGT75X120BTP3 , APTGT75X120E3 , APTGT75X120TE3 , APTLGF140U120T , APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , GT30J122 , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD .
History: 1MBI400NN-120 | 2MBI300VJ-120-50 | RJP60V0DPM | MG300N1US1 | GT10G101 | TGAN60N65F2DR | IRG4BC10SD-S
Keywords - 2PG006 transistor datasheet
2PG006 cross reference
2PG006 equivalent finder
2PG006 lookup
2PG006 substitution
2PG006 replacement
History: 1MBI400NN-120 | 2MBI300VJ-120-50 | RJP60V0DPM | MG300N1US1 | GT10G101 | TGAN60N65F2DR | IRG4BC10SD-S



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