FGW85N60RB Specs and Replacement
Type Designator: FGW85N60RB
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
tr ⓘ - Rise Time, typ: 85 nS
Coesⓘ - Output Capacitance, typ: 1150 pF
Package: TO247
FGW85N60RB Substitution - IGBT ⓘ Cross-Reference Search
FGW85N60RB datasheet
fgw85n60rb.pdf
http //www.fujielectric.com/products/semiconductor/ FGW85N60RB Discrete IGBT Reverse Blocking IGBT 600V / 85A Features Reverse blocking characteristic for 1 chip by Fuji's original technology. High efficiency by applying to T-type 3 level inverter circuit. Applications Uninterruptible power supply Power conditioner Battery system Maximum Ratings and Characteristics Equivalent circu... See More ⇒
Specs: FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , GT30F132 , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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