FGW85N60RB Datasheet. Specs and Replacement

Type Designator: FGW85N60RB  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃

tr ⓘ - Rise Time, typ: 85 nS

Coesⓘ - Output Capacitance, typ: 1150 pF

Package: TO247

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FGW85N60RB datasheet

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FGW85N60RB

http //www.fujielectric.com/products/semiconductor/ FGW85N60RB Discrete IGBT Reverse Blocking IGBT 600V / 85A Features Reverse blocking characteristic for 1 chip by Fuji's original technology. High efficiency by applying to T-type 3 level inverter circuit. Applications Uninterruptible power supply Power conditioner Battery system Maximum Ratings and Characteristics Equivalent circu... See More ⇒

Specs: FGW35N60HC, FGW35N60HD, FGW50N60H, FGW50N60HC, FGW50N60HD, FGW50N60VD, FGW75N60H, FGW75N60HD, IRG4PF50W, 1MBH60-100, FGL40N120AN, BRG15N120D, BRG20N120D, BRG25N120D, SSIG15N135H, SSIG20N135H, BT25T120ANF

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