All IGBT. FGW85N60RB Datasheet

 

FGW85N60RB Datasheet and Replacement


   Type Designator: FGW85N60RB
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 85 nS
   Coesⓘ - Output Capacitance, typ: 1150 pF
   Package: TO247
      - IGBT Cross-Reference

 

FGW85N60RB Datasheet (PDF)

 ..1. Size:532K  fuji
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FGW85N60RB

http://www.fujielectric.com/products/semiconductor/FGW85N60RB Discrete IGBTReverse Blocking IGBT600V / 85AFeaturesReverse blocking characteristic for 1 chip by Fuji's original technology.High efficiency by applying to T-type 3 level inverter circuit.ApplicationsUninterruptible power supplyPower conditionerBattery systemMaximum Ratings and Characteristics Equivalent circu

Datasheet: FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , IHW15N120R3 , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF .

History: IRG4PC50FD | IRG4PSC71KD

Keywords - FGW85N60RB transistor datasheet

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