1MBH60-100 Specs and Replacement
Type Designator: 1MBH60-100
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2(max) V @25℃
Package: TO264
1MBH60-100 Substitution - IGBT ⓘ Cross-Reference Search
1MBH60-100 datasheet
1mbh60-100.pdf
For more information, contact Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http //www.collmer.com ... See More ⇒
Specs: FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , IRGP4063 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF .
Keywords - 1MBH60-100 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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