All IGBT. 1MBH60-100 Datasheet

 

1MBH60-100 Datasheet and Replacement


   Type Designator: 1MBH60-100
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO264
 

 1MBH60-100 substitution

   - IGBT ⓘ Cross-Reference Search

 

1MBH60-100 Datasheet (PDF)

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1MBH60-100

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1MBH60-100

For more information, contact:Collmer Semiconductor, Inc.P.O. Box 702708Dallas, TX 75370972-233-1589972-233-0481 Faxhttp://www.collmer.com

Datasheet: FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , BT60T60ANFK , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF .

History: DGG4015

Keywords - 1MBH60-100 transistor datasheet

 1MBH60-100 cross reference
 1MBH60-100 equivalent finder
 1MBH60-100 lookup
 1MBH60-100 substitution
 1MBH60-100 replacement

 

 
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