All IGBT. BRG25N120D Datasheet

 

BRG25N120D Datasheet and Replacement


   Type Designator: BRG25N120D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 87 pF
   Package: TO3P
      - IGBT Cross-Reference

 

BRG25N120D Datasheet (PDF)

 ..1. Size:763K  blue-rocket-elect
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BRG25N120D

BRG25N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications

 ..2. Size:161K  foshan
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BRG25N120D

BRG25N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo

Datasheet: FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , RJP63K2DPP-M0 , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

History: BT50N60ANF | F3L30R06W1E3_B11 | IRG4PH40UD | FGH20N60UFD | GT45G128 | FGH30N60LSD

Keywords - BRG25N120D transistor datasheet

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