BRG25N120D Specs and Replacement
Type Designator: BRG25N120D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 87 pF
Package: TO3P
BRG25N120D Substitution - IGBT ⓘ Cross-Reference Search
BRG25N120D datasheet
brg25n120d.pdf
BRG25N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications ... See More ⇒
brg25n120d.pdf
BRG25N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo... See More ⇒
Specs: FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , RJP63K2DPP-M0 , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .
History: BT30N60ANF | FGW75N60H
Keywords - BRG25N120D transistor spec
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History: BT30N60ANF | FGW75N60H
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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