BT50N60ANF Datasheet. Specs and Replacement

Type Designator: BT50N60ANF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 312 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 49 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO3P

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BT50N60ANF datasheet

 ..1. Size:106K  crhj
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BT50N60ANF

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c... See More ⇒

 ..2. Size:105K  wuxi china
 bt50n60anf.pdf pdf_icon

BT50N60ANF

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c... See More ⇒

Specs: BRG25N120D, SSIG15N135H, SSIG20N135H, BT25T120ANF, BT15T120ANF, BT15N120ANF, BT40N60BNF, BT30N60ANF, IXGH60N60, BT15N60A9F, AP25G45EM, AP25G45GEM, AP28G45GEM, AP20G45EH, AP20G45EJ, TGPF30N40P, TGPF30N43P

Keywords - BT50N60ANF transistor spec

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