All IGBT. BT50N60ANF Datasheet

 

BT50N60ANF IGBT. Datasheet pdf. Equivalent


   Type Designator: BT50N60ANF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 49 nS
   Coesⓘ - Output Capacitance, typ: 175 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO3P

 BT50N60ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BT50N60ANF Datasheet (PDF)

 ..1. Size:106K  crhj
 bt50n60anf.pdf

BT50N60ANF BT50N60ANF

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c

 ..2. Size:105K  wuxi china
 bt50n60anf.pdf

BT50N60ANF BT50N60ANF

Silicon FS Planar IGBT R BT50N60ANF General Description VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features FS Trench Technology, Positive temperature c

Datasheet: BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , RJP30H2A , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P .

 

 
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